Electronics-Silicon Devices and Materials(Date:2014/01/22)

Presentation
表紙

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[Date]2014/1/22
[Paper #]
目次

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[Date]2014/1/22
[Paper #]
Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement

K. NAGASHIO,  K. KANAYAMA,  T. NISHIMURA,  A. TORIUMI,  

[Date]2014/1/22
[Paper #]SDM2013-135
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side

C. H. Lee,  T. Nishimura,  T. Tabata,  C. Lu,  W. F. Zhang,  K. Nagashio,  A. Toriumi,  

[Date]2014/1/22
[Paper #]SDM2013-136
High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth

Toshifumi IRISAWA,  Minoru ODA,  Keiji IKEDA,  Yoshihiko MORIYAMA,  Eiko MIEDA,  Wipakorn JEVASUWAN,  Taturou MAEDA,  Osamu ICHIKAWA,  Takenori OSADA,  Masahiko HATA,  Yasuyuki MIYAMOTO,  Tsutomu TEZUKA,  

[Date]2014/1/22
[Paper #]SDM2013-137
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs

Wataru MIZUBAYASHI,  Hiroshi ONODA,  Yoshiki NAKASHIMA,  Yuki ISHIKAWA,  Takashi MATSUKAWA,  Kazuhiko ENDO,  Yongxun LIU,  Shinichi O'UCHI,  Junichi TSUKADA,  Hiromi YAMAUCHI,  Shinji MIGITA,  Yukinori MORITA,  Hiroyuki OTA,  Meishoku MASAHARA,  

[Date]2014/1/22
[Paper #]SDM2013-138
Integration of III-V nanowires on Si : From high-performance vertical FET to steep-slope switch

Katsuhiro Tomioka,  Takashi Fukui,  

[Date]2014/1/22
[Paper #]SDM2013-139
Future Prospects of MRAM Technologies

Shinji YUASA,  Akio FUKUSHIMA,  Kay YAKUSHIJI,  Takayuki NOZAKI,  Makoto KONOTO,  Hiroki MAEHARA,  Hitoshi KUBOTA,  Tomohiro TANIGUCHI,  Hiroko ARAI,  Hiroshi IMAMURA,  Koji ANDO,  Yoichi SHIOTA,  Frederic BONELL,  Yoshishige SUZUKI,  Naoharu SHIMOMURA,  Eiji KITAGAWA,  Junichi ITO,  Shinobu FUJITA,  Keiko ABE,  Kumiko NOMURA,  Hiroki NOGUCHI,  Hiroaki YODA,  

[Date]2014/1/22
[Paper #]SDM2013-140
Variable Nonvolatile Memory Arrays for Adaptive Computing Systems

Hiroki NOGUCHI,  Susumu TAKEDA,  Kumiko Nomura,  Keiko ABE,  Kazutaka IKEGAMI,  Eiji KITAGAWA,  Naoharu SHIMOMURA,  Junichi ITO,  Shinobu FUJITA,  

[Date]2014/1/22
[Paper #]SDM2013-141
Analysis of Transistor Characteristics in Distribution Tails beyond ±5.4σ of 11 Billion Transistors

Tomoko MIZUTANI,  Anil KUMAR,  Toshiro HIRAMOTO,  

[Date]2014/1/22
[Paper #]SDM2013-142
Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4V) Operation

H. Makiyama,  Y. Yamamoto,  H. Shinohara,  T. Iwamatsu,  H. Oda,  N. Sugii,  K. Ishibashi,  T. Mizutani,  T. Hiramoto,  Y. Yamaguchi,  

[Date]2014/1/22
[Paper #]SDM2013-143
High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and V_ Tunability

S. H. Kim,  Nakane R. /,  O. Ichikawa,  T. Osada,  M. Hata,  M. Takenaka,  S. Takagi,  

[Date]2014/1/22
[Paper #]SDM2013-144
3D Integrated CMOS Device by Using Wafer Stacking and Via-last TSV

Mayu AOKI,  Futoshi FURUTA,  Kazuyuki HOZAWA,  Yuko HANAOKA,  Kenichi TAKEDA,  

[Date]2014/1/22
[Paper #]SDM2013-145
Three-dimensional Structures for High Saturation Signals and Crosstalk Suppression in 1.20μm Pixel Back-Illuminated CMOS Image Sensor

T. Shinohara,  K. Watanabe,  K. Ohta,  H. Nakayama,  T. Morikawa,  K. Ohno,  D. Sugimoto,  S. Kadomura,  T. Hirayama,  

[Date]2014/1/22
[Paper #]SDM2013-146
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