Presentation 2014-01-29
High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and V_		 Tunability
S. H. Kim, Nakane R. /, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi,
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Abstract(in English) We have investigated the effects of the tri-gate structure on electrical properties of extremely-thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. The Tri-gate ETB InAs-OI MOSFETs shows significant improvement of short channel effects (SCEs) control with small effective mobility (μ_) reduction. As a result, we have successfully fabricated 20-nm-L_ InAs-OI MOSFETs with good electrostatic with S.S. of 84 mV/dec, DIBL of 22 mVYV, and high transconductance (G_m) of 1.64 mS/μm. Furthermore, we have demonstrated wide-range threshold voltage (V_) tunability in Tri-gate InAs-OI MOSFETs through back bias voltage (V_B) control. For the further improvement, the body thickness (T_) scaling effects on μ_ and SCEs control have been investigated. It was found that the thickness of channel layer (T_) scaling is more favorable than the thickness of MOS interface buffer layer (T_) scaling to achieve better SCEs control, indicating necessity of quantum well (QW) channel structure.
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Paper # SDM2013-144
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Committee SDM
Conference Date 2014/1/22(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and V_ Tunability
Sub Title (in English)
Keyword(1)
1st Author's Name S. H. Kim
1st Author's Affiliation Department of Electrical Engineering and Information Systems, The University of Tokyo()
2nd Author's Name Nakane R. /
2nd Author's Affiliation Department of Electrical Engineering and Information Systems, The University of Tokyo
3rd Author's Name O. Ichikawa
3rd Author's Affiliation Department of Electrical Engineering and Information Systems, The University of Tokyo
4th Author's Name T. Osada
4th Author's Affiliation Sumitomo Chemical Co. Ltd.
5th Author's Name M. Hata
5th Author's Affiliation Sumitomo Chemical Co. Ltd.
6th Author's Name M. Takenaka
6th Author's Affiliation Sumitomo Chemical Co. Ltd.
7th Author's Name S. Takagi
7th Author's Affiliation Department of Electrical Engineering and Information Systems, The University of Tokyo
Date 2014-01-29
Paper # SDM2013-144
Volume (vol) vol.113
Number (no) 420
Page pp.pp.-
#Pages 4
Date of Issue