| Presentation | 2014-01-29 Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement K. NAGASHIO, K. KANAYAMA, T. NISHIMURA, A. TORIUMI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate the ultra-high displacement (D) of ～8 V/nm (n = ～4×10^<13> cm^<-2>) in bilayer graphene using the solid state Y_2O_3 top gate, which has been reached only by the ion gating so far. The systematic comparison of I-V and C-V curves at high D elucidates that the carriers in bilayer graphene electrically communicate with trap sites within the band gap and that the filling of carriers in the high energy sub-bands results in the reduction of the conductivity due to the inter-band scattering. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Graphene / High-pressure O_2 anneal / High-k / Quantum capacitance |
| Paper # | SDM2013-135 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2014/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement |
| Sub Title (in English) | |
| Keyword(1) | Graphene |
| Keyword(2) | High-pressure O_2 anneal |
| Keyword(3) | High-k |
| Keyword(4) | Quantum capacitance |
| 1st Author's Name | K. NAGASHIO |
| 1st Author's Affiliation | Department of Materials Engineering, The University of Tokyo() |
| 2nd Author's Name | K. KANAYAMA |
| 2nd Author's Affiliation | Department of Materials Engineering, The University of Tokyo |
| 3rd Author's Name | T. NISHIMURA |
| 3rd Author's Affiliation | Department of Materials Engineering, The University of Tokyo |
| 4th Author's Name | A. TORIUMI |
| 4th Author's Affiliation | Department of Materials Engineering, The University of Tokyo |
| Date | 2014-01-29 |
| Paper # | SDM2013-135 |
| Volume (vol) | vol.113 |
| Number (no) | 420 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |