| Presentation | 2014-01-29 Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs Wataru MIZUBAYASHI, Hiroshi ONODA, Yoshiki NAKASHIMA, Yuki ISHIKAWA, Takashi MATSUKAWA, Kazuhiko ENDO, Yongxun LIU, Shinichi O'UCHI, Junichi TSUKADA, Hiromi YAMAUCHI, Shinji MIGITA, Yukinori MORITA, Hiroyuki OTA, Meishoku MASAHARA, |
|
|---|---|---|
| PDF Download Page |  PDF download Page Link |
|
| Abstract(in Japanese) | (See Japanese page) | |
| Abstract(in English) | The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as I_| variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I. | |
| Keyword(in Japanese) | (See Japanese page) | |
| Keyword(in English) | FinFETs / Source/drain Extension / Heated Ion Implantation / Crystallization / I_ |
|
| Paper # | SDM2013-138 | |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2014/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs |
| Sub Title (in English) | |
| Keyword(1) | FinFETs |
| Keyword(2) | Source/drain Extension |
| Keyword(3) | Heated Ion Implantation |
| Keyword(4) | Crystallization |
| Keyword(5) | I_ |
| Keyword(6) | I_ |
| Keyword(7) | BTI Characteristics |
| 1st Author's Name | Wataru MIZUBAYASHI |
| 1st Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)() |
| 2nd Author's Name | Hiroshi ONODA |
| 2nd Author's Affiliation | Nissin Ion Equipment Co., Ltd. |
| 3rd Author's Name | Yoshiki NAKASHIMA |
| 3rd Author's Affiliation | Nissin Ion Equipment Co., Ltd. |
| 4th Author's Name | Yuki ISHIKAWA |
| 4th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Takashi MATSUKAWA |
| 5th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Kazuhiko ENDO |
| 6th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 7th Author's Name | Yongxun LIU |
| 7th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 8th Author's Name | Shinichi O'UCHI |
| 8th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 9th Author's Name | Junichi TSUKADA |
| 9th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 10th Author's Name | Hiromi YAMAUCHI |
| 10th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 11th Author's Name | Shinji MIGITA |
| 11th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 12th Author's Name | Yukinori MORITA |
| 12th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 13th Author's Name | Hiroyuki OTA |
| 13th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| 14th Author's Name | Meishoku MASAHARA |
| 14th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) |
| Date | 2014-01-29 |
| Paper # | SDM2013-138 |
| Volume (vol) | vol.113 |
| Number (no) | 420 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |