Electronics-Electron Devices(Date:2001/05/30)

Presentation
表紙

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[Date]2001/5/30
[Paper #]
目次

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[Date]2001/5/30
[Paper #]
Realization of thermally stable ohmic contact using Cu-Hf amorphous alloy film to n-type InP

Mayumi B. TAKEYAMA,  Nobuhisa SAKAGUCHI,  Atsushi NOYA,  Tamotsu HASHIZUME,  Hideki HASEGAWA,  

[Date]2001/5/30
[Paper #]ED2001-44
Application of ZrN barrier with nanocrystalline structure for high performance Cu metallization

Mayumi B. TAKEYAMA,  Takaomi ITOI,  Eiji AOYAGI,  Atsushi NOYA,  

[Date]2001/5/30
[Paper #]ED2001-45
Isothermal capacitance transient spectroscopy study for p-GaN Schottky contacts

Kenji Shiojima,  Suehiro sugitani,  Shiro Sakai,  

[Date]2001/5/30
[Paper #]ED2001-46
Estimation of conduction-band offset in GaAsP/GaAs heterostructure by triple-barrier resonant tunneling diodes

Susumu Ohki,  Hiroki Funato,  Michihiko Suhara,  Tugunori Okumura,  Lars-Erik Wernersson,  Werner Seifert,  

[Date]2001/5/30
[Paper #]ED2001-47
Surface control of AlGaN/GaN heterostructures using an ultrathin AlO_x film and an ECR-CVD SiN_x film

Shinya Ootomo,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]2001/5/30
[Paper #]ED2001-48
Contactless electrical characterization of SOI layers : SPV measurements with UV excitation

A. En,  K. Eguchi,  S. Nakamura,  M. Suhara,  T. Okumura,  

[Date]2001/5/30
[Paper #]ED2001-49
Study of (100) InP Surface Using Molecular Orbital Calculation Method

Yoichi YAMAMURA,  Yuki KASAI,  Satoshi MIYAMURA,  Takao INOKUMA,  Koichi IIYAMA,  Saburo TAKAMIYA,  

[Date]2001/5/30
[Paper #]ED2001-50
Sb and Bi passivation effect on GaAs

Nobuhiro Kuroda,  Hideaki Ikoma,  

[Date]2001/5/30
[Paper #]ED2001-51
[OTHERS]

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[Date]2001/5/30
[Paper #]