| Presentation | 2001/5/30 Realization of thermally stable ohmic contact using Cu-Hf amorphous alloy film to n-type InP Mayumi B. TAKEYAMA, Nobuhisa SAKAGUCHI, Atsushi NOYA, Tamotsu HASHIZUME, Hideki HASEGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The electrical property as well as the interfacial reaction and/or diffusion have been investigated in the Cu-Hf/InP contact to realize the thermally stable ohmic contact to n-type InP. As compared with results of the previous Cu-Zr/InP contact, the application of the Cu-Hf amorphous alloy similarly brings about the good I-V characteristics, and the formation of the uniform interlayer at the Cu-Hf/InP interface suppressing the Cu diffusion into the InP substrate after rapid thermal annealing (RTA), although the formed interlayer is not Cu-P but Cu-In at the interface. It is revealed that Cu-based amorphous alloys are one of the excellent materials applicable as an ohmic contact to n-type InP. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP / ohmic contact / interfacial reaction / electrical property / amorphous alloy |
| Paper # | ED2001-44 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2001/5/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Realization of thermally stable ohmic contact using Cu-Hf amorphous alloy film to n-type InP |
| Sub Title (in English) | |
| Keyword(1) | InP |
| Keyword(2) | ohmic contact |
| Keyword(3) | interfacial reaction |
| Keyword(4) | electrical property |
| Keyword(5) | amorphous alloy |
| 1st Author's Name | Mayumi B. TAKEYAMA |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Nobuhisa SAKAGUCHI |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| 5th Author's Name | Hideki HASEGAWA |
| 5th Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| Date | 2001/5/30 |
| Paper # | ED2001-44 |
| Volume (vol) | vol.101 |
| Number (no) | 104 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |