| Presentation | 2001/5/30 Sb and Bi passivation effect on GaAs Nobuhiro Kuroda, Hideaki Ikoma, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Sb and Bi passivation effects on GaAs (100) surface were investigated. Good I-V characteristics with low reverse leakage current and high Schottky barrier height were obtained, when Sb-and Bi-layer thicknesses were adequate. From XPS and SIMS data, passivation effects are considered to stem from Sb-and Bi-terminations of GaAs surface, removal of native oxide on GaAs and suppressions of Au (electrode) diffusion into GaAs with Sb and Bi layers. Uniform GaN/GaAs structures were obtained by plasma nitridation of Sb/GaAs sample. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / Sb / Bi / passivation / GaN/GaAs / J-V characteristics |
| Paper # | ED2001-51 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2001/5/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Sb and Bi passivation effect on GaAs |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | Sb |
| Keyword(3) | Bi |
| Keyword(4) | passivation |
| Keyword(5) | GaN/GaAs |
| Keyword(6) | J-V characteristics |
| 1st Author's Name | Nobuhiro Kuroda |
| 1st Author's Affiliation | Science University of Tokyo() |
| 2nd Author's Name | Hideaki Ikoma |
| 2nd Author's Affiliation | Science University of Tokyo |
| Date | 2001/5/30 |
| Paper # | ED2001-51 |
| Volume (vol) | vol.101 |
| Number (no) | 104 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |