Presentation	2001/5/30 Isothermal capacitance transient spectroscopy study for p-GaN Schottky contacts Kenji Shiojima, Suehiro sugitani, Shiro Sakai,
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Abstract(in English)	High-temperature isothermal capacitance transient spectroscopy measurements were conducted to clarify the memory effect in Ni Schottky contacts formed on Mg-doped p-GaN. A large single peak was detected in 60-100 s at 175 ℃. The energy level of the defect was roughly estimated to be around 1.1 eV, which is consistent with a gallium vacancy (V_). Carrier capture and emission to these defects are the origins of a large memory effect. These results would be the first obtained for the thermal emission from V_ by electrical measurements.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	p-GaN / Schottky contact / ICTS / deep level defect
Paper #	ED2001-46
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Conference Information
Committee	ED
Conference Date	2001/5/30(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Isothermal capacitance transient spectroscopy study for p-GaN Schottky contacts
Sub Title (in English)
Keyword(1)	p-GaN
Keyword(2)	Schottky contact
Keyword(3)	ICTS
Keyword(4)	deep level defect
1st Author's Name	Kenji Shiojima
1st Author's Affiliation	NTT Photonics Laboratories()
2nd Author's Name	Suehiro sugitani
2nd Author's Affiliation	NTT Photonics Laboratories
3rd Author's Name	Shiro Sakai
3rd Author's Affiliation	Department of Electrical and Electronic Engineering, Tokushima University
Date	2001/5/30
Paper #	ED2001-46
Volume (vol)	vol.101
Number (no)	104
Page	pp.pp.-
#Pages	6
Date of Issue