IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2009/06/17)

Presentation

Gate-All-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped Layer

D. S. Lee, H.-S. Yang, K. C. Kang, J.-E. Lee, J. H. Lee, B.-G. Park,

[Date]2009/6/17
[Paper #]ED2009-68,SDM2009-63

A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor

Jin Kwan Kim, Keedong Yang, Yong Soo Lee, Hee Chul Lee,

[Date]2009/6/17
[Paper #]ED2009-69,SDM2009-64

Electron Devices Based on GaN and Related Nitride Semiconductors

Masaaki KUZUHARA,

[Date]2009/6/17
[Paper #]ED2009-70,SDM2009-65

InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface

Masanobu HIROKI, Narihiko MAEDA, Takashi KOBAYASHI, Naoteru Shigekawa,

[Date]2009/6/17
[Paper #]ED2009-71,SDM2009-66

InGaAs/InP MISFET with epitaxially grown source

Yasuyuki Miyamoto, Toru Kanazawa, Hisahi Saito, Kazuhito Furuya,

[Date]2009/6/17
[Paper #]ED2009-72,SDM2009-67

4H-SiC Avalanche Photodiodes for 280nm UV Detection

B.-R. Park, H.-K. Sung, Chun-Hyung Cho, P. M. Sandvik, Ho-Young Cha,

[Date]2009/6/17
[Paper #]ED2009-73,SDM2009-68

Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition

Kimihito Ooyama, Chihoko Mizue, Yujin Hori, Tamotsu Hashizume,

[Date]2009/6/17
[Paper #]ED2009-74,SDM2009-69

InP Gunn diodes with shallow-barrier Schottky contacts

M. R. Kim, J. K. Rhee, S. D. Lee, Y. S. Chae, S. K. Sharma, A. Kathalingam, C. W. Lee, H. J. Lim, J. H. Choi, W. J. Kim,

[Date]2009/6/17
[Paper #]ED2009-75,SDM2009-70

Formation and application of InP porous structures on p-n substrates

Taketomo SATO, Naoki YOSHIZAWA, Hiroyuki OKAZAKI, Tamotsu HASHIZUME,

[Date]2009/6/17
[Paper #]ED2009-76,SDM2009-71

A New Bottom-Gated Polysiliccon Thin Film Transistors with Polysilicon spacer

Y. J. Chen, T. C. Li, F. T. Chien, C. N. Liao, Y. T. Tsai,

[Date]2009/6/17
[Paper #]ED2009-77,SDM2009-72

Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network

Seiya KASAI, Tetsuya ASAI, Yuta SHIRATORI, Daisuke NAKATA,

[Date]2009/6/17
[Paper #]ED2009-78,SDM2009-73

Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector

Yasuyuki Miyamoto, Shinnosuke Talahashi, Takashi Kobayashi, Hiroyuki Suzuki, Kazuhito Furuya,

[Date]2009/6/17
[Paper #]ED2009-79,SDM2009-74

Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission

Toshihiro Itoh, Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata,

[Date]2009/6/17
[Paper #]ED2009-80,SDM2009-75

Synthesis of small diameter silicon nanowires on SiO_2 and Si3_N_4 surfaces

J. H. Ahn, J. H. Lee, T. W. Koo, M. G. Kang, D. M. Whang, S. W. Hwang,

[Date]2009/6/17
[Paper #]ED2009-81,SDM2009-76

Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_<1-x>N

Ji-Ho PARK, Hiroshi OKADA, Akihiro WAKAHARA, Yuzo FURUKAWA, Yong-Tae KIM, Jonghan SONG, Ho-Jung CHANG, Shin-ichiro SATO, Takeshi OHSHIMA,

[Date]2009/6/17
[Paper #]ED2009-82,SDM2009-77

Novel-Functional Single-Electron Devices Using Silicon Nanodot Array

Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung-Bum Choi,

[Date]2009/6/17
[Paper #]ED2009-83,SDM2009-78

MOS Transistors fabricated on Si(551) surface based on radical reaction processes

A. Teramoto, W. Cheng, C. F. Tye, S. Sugawa, T. Ohmi,

[Date]2009/6/17
[Paper #]ED2009-84,SDM2009-79

Effective annealing for Si film

T. Noguchi, T. Miyahira, Y. Chen, J. D. Mugiraneza,

[Date]2009/6/17
[Paper #]ED2009-85,SDM2009-80

Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy

Tomoyuki SUWA, Takashi ARATANI, Masaaki HIGUCHI, Sigetoshi SUGAWA, Eiji IKENAGA, Jiro USHIO, Hiroshi NOHIRA, Akinobu TERAMOTO, Tadahiro OHMI, Takeo HATTORI,

[Date]2009/6/17
[Paper #]ED2009-86,SDM2009-81

Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor

H. Murakami, S. Mahboob, K. Katayama, K. Makihara, M. Ikeda, H. Hata, A. Kuroda, S. Higashi, S. Miyazaki,

[Date]2009/6/17
[Paper #]ED2009-87,SDM2009-82