| Presentation | 2009-06-25 Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_<1-x>N Ji-Ho PARK, Hiroshi OKADA, Akihiro WAKAHARA, Yuzo FURUKAWA, Yong-Tae KIM, Jonghan SONG, Ho-Jung CHANG, Shin-ichiro SATO, Takeshi OHSHIMA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions-doped III-nitride semiconductor. Tb ions were implanted into Al_<0.35>Ga_<0.65>N epi-layers grown by OMVPE, and the dose were in the range of 1×10^<12>～2.8×10^<16>Tb/cm^2. RBS/C reveals that ion-beam-induced damage level steeply increases when the dose exceed 5×10^<14>Tb/cm^2. Tb-related luminescence properties are much susceptible to defect, because CL intensity begins to saturate even at low dose (1×10^<13>Tb/cm^2) at which expected defect density is very low. Transient decay time became faster as increases Tb ions dose above 1×10^<13>Tb/cm^2. The results suggest that non-radiative defects, perhaps Tb-defect complexes, are formed in low dose condition even though the structural defect density is very low. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Rare Earth / Terbium / AlGaN / Ion-Beam-Damage / III-nitride semiconductor / MOCVD |
| Paper # | ED2009-82,SDM2009-77 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_<1-x>N |
| Sub Title (in English) | |
| Keyword(1) | Rare Earth |
| Keyword(2) | Terbium |
| Keyword(3) | AlGaN |
| Keyword(4) | Ion-Beam-Damage |
| Keyword(5) | III-nitride semiconductor |
| Keyword(6) | MOCVD |
| 1st Author's Name | Ji-Ho PARK |
| 1st Author's Affiliation | Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech.() |
| 2nd Author's Name | Hiroshi OKADA |
| 2nd Author's Affiliation | Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech. |
| 3rd Author's Name | Akihiro WAKAHARA |
| 3rd Author's Affiliation | Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech. |
| 4th Author's Name | Yuzo FURUKAWA |
| 4th Author's Affiliation | Dept. of Electronics & Information Eng., Toyohashi Univ. of Tech. |
| 5th Author's Name | Yong-Tae KIM |
| 5th Author's Affiliation | Nano-Sci. Res. Center |
| 6th Author's Name | Jonghan SONG |
| 6th Author's Affiliation | Adv. Analysis Center, KIST |
| 7th Author's Name | Ho-Jung CHANG |
| 7th Author's Affiliation | Dept. of Electronics & Information Eng., Dankook Univ. |
| 8th Author's Name | Shin-ichiro SATO |
| 8th Author's Affiliation | Takasaki Adv. Radiation Res. Institute, JAEA |
| 9th Author's Name | Takeshi OHSHIMA |
| 9th Author's Affiliation | Takasaki Adv. Radiation Res. Institute, JAEA |
| Date | 2009-06-25 |
| Paper # | ED2009-82,SDM2009-77 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |