| Presentation | 2009-06-25 MOS Transistors fabricated on Si(551) surface based on radical reaction processes A. Teramoto, W. Cheng, C. F. Tye, S. Sugawa, T. Ohmi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Though the electron mobility in the channel of MOSFET on Si(100) surface which is currently used for LSI devices is largest of all, the hole mobility is smallest. We have reported that the high quality gate insulator films can be formed on any oriented silicon surfaces by using radical oxidation and radical nitridation. Then, We can use Si(551) surface for fabricating the LSI devices. Si(551) is a surface orientation where 8゜ off from the Si(110) in <100> direction and is hard to be roughened by alkali solutions. The hole mobility in Si(551) surface is almost as large as Si(110). We demonstrate the high performance CMOS by fabricating accumulation mode MOSFETs on Si(551) surface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon / surface orientation / MOSFET / mobility / SOI / accumulation mode |
| Paper # | ED2009-84,SDM2009-79 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOS Transistors fabricated on Si(551) surface based on radical reaction processes |
| Sub Title (in English) | |
| Keyword(1) | silicon |
| Keyword(2) | surface orientation |
| Keyword(3) | MOSFET |
| Keyword(4) | mobility |
| Keyword(5) | SOI |
| Keyword(6) | accumulation mode |
| 1st Author's Name | A. Teramoto |
| 1st Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University() |
| 2nd Author's Name | W. Cheng |
| 2nd Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| 3rd Author's Name | C. F. Tye |
| 3rd Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 4th Author's Name | S. Sugawa |
| 4th Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 5th Author's Name | T. Ohmi |
| 5th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University:World Premier International Research Center, Tohoku University |
| Date | 2009-06-25 |
| Paper # | ED2009-84,SDM2009-79 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |