| Presentation | 2009-06-25 Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki SUWA, Takashi ARATANI, Masaaki HIGUCHI, Sigetoshi SUGAWA, Eiji IKENAGA, Jiro USHIO, Hiroshi NOHIRA, Akinobu TERAMOTO, Tadahiro OHMI, Takeo HATTORI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The Si_3N_4/Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on 1) the observation that no Si atoms bonded with three N atoms and one Si atom were detected, 2) the observation that the number of Si-H bonds at the Si_3N_4/Si(110) interface is 38～53% larger than those at the Si_3N_4/Si(100) and Si_3N_4/Si(111) interfaces indicates a dependence of the interface structure on the orientation of the substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon nitride film / interface structure / soft x-ray-excited photoemission |
| Paper # | ED2009-86,SDM2009-81 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | silicon nitride film |
| Keyword(2) | interface structure |
| Keyword(3) | soft x-ray-excited photoemission |
| 1st Author's Name | Tomoyuki SUWA |
| 1st Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University() |
| 2nd Author's Name | Takashi ARATANI |
| 2nd Author's Affiliation | Shin-Etsu Chemical Co., Ltd. |
| 3rd Author's Name | Masaaki HIGUCHI |
| 3rd Author's Affiliation | TOSHIBA CORPORATION |
| 4th Author's Name | Sigetoshi SUGAWA |
| 4th Author's Affiliation | Tohoku University |
| 5th Author's Name | Eiji IKENAGA |
| 5th Author's Affiliation | Japan Synchrotron Radiation Research Institute |
| 6th Author's Name | Jiro USHIO |
| 6th Author's Affiliation | Hitachi, Ltd. |
| 7th Author's Name | Hiroshi NOHIRA |
| 7th Author's Affiliation | Musashi Institute of Technology |
| 8th Author's Name | Akinobu TERAMOTO |
| 8th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| 9th Author's Name | Tadahiro OHMI |
| 9th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| 10th Author's Name | Takeo HATTORI |
| 10th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| Date | 2009-06-25 |
| Paper # | ED2009-86,SDM2009-81 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |