Summary
International Symposium on Nonlinear Theory and its Applications
2017
Session Number:A1L-E
Session:
Number:A1L-E-2
Brain-Like Synapse Oxide Thin-Film Transistors Gated by Solid Electrolytic Gate Insulators
Yeomyeong Kim, EomJi Kim, Sungmin Yoon,
pp.83-86
Publication Date:2017/12/4
Online ISSN:2188-5079
Summary:
Synaptic oxide thin-film transistors (TFTs) using two types of solid electrolytic gate insulators were fabricated and characterized for realizing the brain-like synaptic operations. The channel conductance of synaptic TFTs was gradually modulated upon applied input pulses with variations in pulse width, pulse amplitude and number of pulses by the movement of ions in electrolytic gate insulators. The synaptic operations including short-term memory and decay behavior were well emulated for both synaptic TFTs. The synapse TFTs employing an oxide channel and electrolytic gate insulator could be expected to be promising synapse devices for large-area electronics.