Summary
International Symposium on Antennas and Propagation
2012
Session Number:1E4
Session:
Number:1E4-4
Characteristics of RF-DC Conversion Circuit for Wireless Power Transmission using the Low Resistance GaN Schottky Barrier Diode
Kazuhiro Fujimori, Teruhiko Wagi, Kenji Tsuruta, Shigeji Nogi, Yuichiro Ozawa, Minoru Furukawa, Teruo Fujiwara,
pp.-
Publication Date:2012/10/29
Online ISSN:2188-5079
Summary:
RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.