Summary
International Symposium on Nonlinear Theory and its Applications
2010
Session Number:A1L-C
Session:
Number:A1L-C3
Relaxation Oscillation in Single-Electron Transistor with Resistively-Shunted Gate
Yoshinao Mizugaki,
pp.43-46
Publication Date:2010/9/5
Online ISSN:2188-5079
Summary:
The author presents that a single-electron transistor with a resistively-shunted gate (RSG-SET) has an operation mode exhibiting relaxation oscillation. A shunting resistor added parallel to the gate capacitance is the key. Single-electron tunneling carries electric charge discretely into the island, while the dissipation in the shunting resistor reduces the island charge continuously. The combination of discrete and continuous charge transfer eventually results in the relaxation oscillation of the island charge. Numerical Monte Carlo simulation demonstrates the relaxation oscillation. Conditions for the bias voltage are also derived.