Summary
International Symposium on Electromagnetic Compatibility
2014
Session Number:16A1-B
Session:
Number:16A1-B2
Improvement of ESD Robustness in Gallium Nitride-based Flip-Chip HEMT by Introducing Metal-Insulator-Metal Capacitor
Ping-Yu Kuei, Nan-Hung Cheng, Yi-Cherng Ferng, Atanu Das, Shu-Liang Lin, Ching-Chi Lin, Liann-Be Chang, Yung-Fang Chen ,
pp.-
Publication Date:2014/05/12
Online ISSN:2188-5079
Summary:
We report on improvement of ESD characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) using metal-insulator-metal (MIM) structure aluminium nitride (AlN) flip-chip (FC) submount. Compared with FC-free HEMT, measured results of the FC HEMT show the improvements of 25 and 150% under drain-to-source and gate-to- source electrostatic discharge (ESD) stress respectively, which is attributed to an extra path formed in the MIM structure AlN FC submount to flow the ESD current and to support the charge by the additional capacitances.