Summary
Optoelectronics and Communications Conference/International Conference on Integrated Optics and Optical Fiber Communication
2007
Session Number:13P
Session:
Number:13P-25
High bandwidth semiconductor gain material for photonic active devices with a stacked quantum dots structure grown by strain-compensation technique
KouichiAkahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Akio Ueta, Hideyuki Sotobayashi, Masahiro Tsuchiya,
pp.752-753
Publication Date:2007/7/9
Online ISSN:2188-5079
Summary:
We have developed a new scheme to fabricate QDs in order to expand the potential bandwidths of QD active regions. The full-width at half maximum of photoluminescence of QDs is as high as 240 nm.