Summary
Optoelectronics and Communications Conference/International Conference on Integrated Optics and Optical Fiber Communication
2007
Session Number:13D2
Session:
Number:13D2-2
GaInNAs Distributed Feedback (DFB) Laser Diode with High Resistive Semiconductor Current-blocking Layer
Jun-ichi Hashimoto, Kenji Koyama, Takashi Ishizuka, Yukihiro Tsuji, Kousuke Fujii, Takashi Yamada, Chie Fukuda, Yutaka Onishi, Tsukuru Katsuyama,
pp.658-659
Publication Date:2007/7/9
Online ISSN:2188-5079
Summary:
GaInNAs-DFB laser with a high resistive semiconductor current-blocking layer was developed. CW oscillation could be possible up to 110 ℃ with SMSR > 42dB. 10-Gbps-modulation with a clear eye- opening could be possible between 25℃ and 80℃.