Summary

Proceedings of the 2012 International Symposium on Nonlinear Theory and its Applications

2012

Session Number:D2L-C

Session:

Number:864

Bursting oscillations in a memristor-based dynamic model

Toshiya Hatanaka,  Kuniyasu Shimizu,  Yutaka Haga,  

pp.864-867

Publication Date:

Online ISSN:2188-5079

DOI:10.15248/proc.1.864

PDF download (1.9MB)

Memristive resistor (memristor) has attracted many researchers' attentions. In this study, we report that there exist various bursting oscillations in a memristor-based simple dynamic model. The successive bursts are triggered by a gradually increasing memory resistance (memristance) in the model. An average interburst interval of the bursting oscillations is measured. In addition, the other oscillatory phenomena around the boundary existing regions of the bursting oscillations are shown.

[1] L. O. Chua, “Memristor — The missing circuit element,” IEEE Trans. Circuit Theory, vol. CT-18, no. 5, pp. 507-519, 1971.

[2] D. B. Strukov, G. S. Snider, G. R. Stewart, and R. S. Williams, “The missing memristor found,” Nature, pp. 80-83, Mar. 2008.

[3] Q. Xia, W. Robinett, M. W. Cumbie, N. Banerjee, T. J. Cardinali, J. J. Yang, W. Wu, X. Li, W. M. Tong, D. B. Strukov, G. S. Snider, G. Medeiros-Ribeiro, and R. S.William, “Memristor — CMOS hybrid integrated circuits for reconfigurable logic, ”Nano Lett., vol. 9, no. 10, pp. 3640-3645, 2009.

[4] B. L. Barranco and T. S. Gotarredona, “Memristance can explain spike-time-dependent-plasticity in neural synapses,” Nature Precedings, 31st, 2009.

[5] B. C. Bao, Z. Liu and J. P. Xu, “Steady periodic memristor oscillator with transient chaotic behaviours,” Electronics Letters, vol.46, no.3, 2010.

[6] J. Borghetti, G. S. Snider, P. J. Kuekes, J. J Yang, D. R. Stewart, and R. S. Williams, “‘Memristive' switches enable ‘stateful' logic operations via material implication,” Nature, vol. 464, pp.873-876, 2010.

[7] I.E.Ebong and P.Mazumger, “Self-Controlled Writing and Erasing in a Memristor Crossbar Memory,” IEEE Trans. Nanotech., vol.10, no.6, pp. 1454-1463, 2011.

[8] S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, “Nanoscale memristor device as synapse in neuromorphic systems,”Nano Lett., vol. 10, no. 4, pp. 1297-1301, 2010.

[9] F. Corinto, A. Ascoli, V. Lanza, and M. Gilli, “Memristor synaptic dynamics' influence on synchronous behavior of two Hindmarsh-Rose neurons,” Int. Joint Conference on Neural Networks, pp.2403-2408, 2011.

[10] T. Hatanaka, K. Shimizu, and Y. Haga, “Influence of an applied pulse voltage in a memristive circuit model”, IEEE Workshop on Nonlinear Circuit Network, pp.118-121, 2011.

[11] Y. V. Pershin, S. L. Fontaine, and M. D. Ventra, “Memristive model of amoeba learning,” Phys. Rev.E, 80, 021926, 2009.

[12] M. Itoh and L. O. Chua, “Memristor oscillators,” Int. Jour. of Bifurcation and Chaos, vol.18, no.11, pp.3183-3206, 2008.