Summary

International Symposium on Nonlinear Theory and Its Applications

2022

Session Number:A4L-D

Session:

Number:A4L-D-04

Tunnel Conductance Modeling of Spintronics Devices Based on Device Temperature Dynamics

Yushi Kikuchi ,   Yoshihiko Horio ,   Shunsuke Fukami ,   Hiroyasu Ando,  

pp.139-142

Publication Date:12/12/2022

Online ISSN:2188-5079

DOI:10.34385/proc.71.A4L-D-04

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Summary:
Spintronics devices are known to reproduce some functions of synapses (e.g., spike-timing-dependent plasticity (STDP)) and neurons (e.g., leaky integration of input spikes). However, only a few models have been investigated for the use of spintronics devices in neural network circuits. Herein, we develop a mathematical model for the application of spintronics devices to spiking neural network circuits. The proposed mathematical model describes the relationship between the input and the value of the tunneling conductance of the spintronics device.