Summary
International Symposium on Nonlinear Theory and Its Applications
2022
Session Number:A4L-D
Session:
Number:A4L-D-04
Tunnel Conductance Modeling of Spintronics Devices Based on Device Temperature Dynamics
Yushi Kikuchi , Yoshihiko Horio , Shunsuke Fukami , Hiroyasu Ando,
pp.139-142
Publication Date:12/12/2022
Online ISSN:2188-5079
DOI:10.34385/proc.71.A4L-D-04
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Summary:
Spintronics devices are known to reproduce some functions of synapses (e.g., spike-timing-dependent plasticity (STDP)) and neurons (e.g., leaky integration of input spikes). However, only a few models have been investigated for the use of spintronics devices in neural network circuits. Herein, we develop a mathematical model for the application of spintronics devices to spiking neural network circuits. The proposed mathematical model describes the relationship between the input and the value of the tunneling conductance of the spintronics device.