Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2016
Session Number:M3-3
Session:
Number:M3-3-3
A Subthreshold Ultra-Low Power Low-Voltage High Resolution DCO using Al Pad metal Layers for BLE Application in 55 nm Technology
Hamed Abbasizadeh, Seong-Jin Oh, Sang-Sun Yoo, Kang-Yoon Lee ,
pp.319-321
Publication Date:2016/7/10
Online ISSN:2188-5079
Summary:
This paper presents the design and implementation of an ultra-low power Digitally Controlled Oscillator (DCO) for Bluetooth Low-Energy (BLE) applications which has wide tuning range about 4.2 GHz ~ 6.1 GHz. The device consists of MOSFET circuits operating in the sub-threshold region and the power dissipation is reduced by sub-threshold design. High frequency resolution is achieved by using the fine tuning bank and the Delta-Sigma Modulator (DSM). A very small capacitance, about 16.22 aF through customized lateral MOM capacitor is utilized for attaining small switchable capacitance in fine tuning bank. To eliminate routing metals' parasitic inductance, a ultra-wide Aluminium (Al) pad metal layers are incorporated as a supper conductor. The proposed DCO is designed using CMOS 55 nm process. The S-parameter based simulation results prove that the current consumption is 480 µA at center frequency of 4.88 GHz at 0.55 V supply voltage. Also, high frequency resolution of 4.8 kHz is achieved. The DCO phase noise is about -114.1 dBc/Hz at 1-MHz offset. The layout size is 250×470 µm2