Summary
Optoelectronics and Communications Conference/International Conference on Integrated Optics and Optical Fiber Communication
2007
Session Number:12E4
Session:
Number:12E4-5
Roughness reduction of Si waveguides by KrF excimer laser reformation
Eih-Zhe Liang, Shih-Che Hung, Ching-Fuh Lin,
pp.452-453
Publication Date:2007/7/9
Online ISSN:2188-5079
Summary:
Roughness reduction of Si waveguides by KrF excimer laser reformation is demonstrated. The root-mean-square roughness of the reactive-ion-etched Si surface is reduced from 13.95 nm to 0.239 nm with a laser intensity of 1.4 J/cm2