Summary

Optoelectronics and Communications Conference/International Conference on Integrated Optics and Optical Fiber Communication

2007

Session Number:13D1

Session:

Number:13D1-4

The Impact of InAlGaAs Barriers on Material and Differential Gain of Quantum Wells on Low Indium Content InGaAs Ternary Substrates

T. Fujisawa,  M.Arai,  T. Yamanaka,  Y. Kondo,  H. Yasaka,  

pp.652-653

Publication Date:2007/7/9

Online ISSN:2188-5079

DOI:10.34385/proc.49.13D1-4

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Summary:
The impact of InAlGaAs barriers on material and differential gain of quantum wells (QWs) on InGaAs substrates is theoretically investigated. Material gain of QWs with InAlGaAs barriers can be largely increased because of deeper ΔEc.