Summary
Optoelectronics and Communications Conference/International Conference on Integrated Optics and Optical Fiber Communication
2007
Session Number:11P
Session:
Number:11P-29
Growth and characterisation of InSb Films on GaAs Substrate grown using molecular beam epitaxy
Lin LI, Guo-jun LIU, Zhanguo LI, Mei LI, Xiao-hua Wang,
pp.278-279
Publication Date:2007/7/9
Online ISSN:2188-5079
Summary:
InSb thin films were grown using molecular beam epitaxy, characterized by using SEM, TEM and XRD measurements. These results indicate that the InSb buffer layer grown at low temperature plays an important role in the growth of InSb films on GaAs substrates.