Investigation of Oxide Mode in 1.3 μm InGaAsN Vertical Cavity Surface Emitting Lasers

H. C. Yu; Y .K. Su; S. J. Chang; C. Y. Huang; F. I. Lai; H. C. Kuo; H. P. D. Yang; T. D. Lee

Summary

Optoelectronics and Communications Conference/International Conference on Integrated Optics and Optical Fiber Communication

2007

Session Number:11P

Session:

Number:11P-26

Investigation of Oxide Mode in 1.3 μm InGaAsN Vertical Cavity Surface Emitting Lasers

H. C. Yu, Y .K. Su, S. J. Chang, C. Y. Huang, F. I. Lai, H. C. Kuo, H. P. D. Yang, T. D. Lee,

pp.272-273

Publication Date:2007/7/9

Online ISSN:2188-5079

DOI:10.34385/proc.49.11P-26

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Summary:

In this report, 1.3 μm oxide confined InGaAsN/GaAs VCSELs grown by MOVPE were fabricated. The lasing spectra with blue-shift oxide mode were observed. The related DC characteristics of the fabricated VCSELs are also reported.