Summary
International Symposium on Antennas and Propagation
2008
Session Number:3D06
Session:
Number:3D06-2
De-Embedding Method Using EM Simulator for Device Characterization and Error Estimation of Conventional Method Using Open/Short-TEG
Takuichi Hirano, Hiroshi Nakano, Yasutake Hirachi, Jiro Hirokawa, Makoto Ando,
pp.-
Publication Date:2008/10/27
Online ISSN:2188-5079
Summary:
Accurate characterization of field effect transistor (FET) is necessary for precise design of monolithic-microwave integrated-circuit (MMIC). Extraction of FET parameters, or characterization, is difficult because the FET is embedded in the parasitic circuit, which is referred to as test element group (TEG), to connect probe and bias. De-embedding method using open/shortTEG [1] had been widely used in the characterization of FET. But two approximations are used in the de-embedding method using open/short-TEG [1]; (1) incompleteness of open and short pattern, and (2) approximation of a parasitic circuit by an equivalent circuit topology. Those approximations cause ambiguity and non-negligible error especially in high microwave band. So, the authors have proposed the de-embedding method using EM simulator [2], which is more accurate than the conventional de-embedding method. In this paper, the error factor in the conventional de-embedding method is identified by comparing with the proposed de-embedding method. And, the applicability of the proposed deembedding method for a coplanar-type TEG with very lossy substrate is investigated because the FET characterization on Si CMOS is very serious problem in the millimeter-wave band.