Summary

International Technical Conference on Circuits/Systems, Computers and Communications

2008

Session Number:E1

Session:

Number:E1-3

Fault Analysis of Interconnect Opens in 90nm CMOS ICs with Device Simulator

Masaki Hashizume,  Yuichi Yamada,  Hiroyuki Yotsuyanagi,  Toshiyuki Tsutsumi,  Koji Yamazaki,  Yoshinobu Higami,  Hiroshi Takahashi,  Yuzo Takamatsu,  

pp.-

Publication Date:2008/7/7

Online ISSN:2188-5079

DOI:10.34385/proc.39.E1-3

PDF download (152.5KB)

Summary:
Faulty effects of interconnect opens in logic ICs fabricated with a 90nm CMOS process are analyzed by device simulation. Also, it is examined whether a logical error can be caused at an opened input signal line by logic signals of the neighboring signal lines. The simulation results suggest us that a logical error may occur at an interconnect surrounding by 8 interconnects if the interconnects are longer than 5μm and the width of an open defect is greater than 2.0nm.