Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2008
Session Number:C4
Session:
Number:C4-3
A Method to Improve Linearity of a Variable Operating Range Transconductor
Toshio Miyazawa, Fujihiko Matsumoto, Kazufumi Kanegae, Yasuaki Noguchi,
pp.-
Publication Date:2008/7/7
Online ISSN:2188-5079
Summary:
A transconductor using bias offset technique is known as a linear MOS transconductor. The linearity is deteriorated by nonideal factors. Major deterioration is caused by mobility degradation from an effect of vertical field. This paper proposes a linearization technique of the MOS transconductor following change of operating range. This technique improves the linearity of transconductance characteristic by adding two MOSFETs operating as resistors and a source follower to the conventional circuit.