Summary
International Symposium on Antennas and Propagation
2006
Session Number:3D1b
Session:
Number:3D1b-5
Safety Threshold Predictions of On-Chip Interconnects and Devices Illuminated by High-Power Electromagnetic Pulse (HP-EMPs)
Wen-Yan Yin, J. F. Xu, X. T. Dong, Jun-Fa Mao, Le-Wei Li,
pp.1-4
Publication Date:2006/11/2
Online ISSN:2188-5079
Summary:
In the presence of high-power electromagnetic pulse (HPEMP), electrical and thermal safety thresholds of some onchip interconnects, and passive and active devices are investigated in this paper, directly related to their possible electrical or thermal breakdowns. These safety thresholds include (a) maximum current-carrying density of bonding wires; (b) breakdown field strength of thin film capacitors; c peak and average power handling capabilities of conventional microstrip interconnects (MI), finite-ground thin film microstrip (FG-TF-MI) and finite-ground thin film coplanar waveguide (FG-TF-CPW) interconnects; and (d) rise in the maximum channel temperature of GaAs field effect transistors (FET). In order to capture these safety thresholds, efficient nonlinear electromagnetic-thermal coupling finite difference time domain (FDTD) and finite element methods (FEM) are implemented in the numerical computation. These safety thresholds will be useful for further taking electromagnetic protection so as to prevent on-chip device breakdown from attack by an HP-EMP.