IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2007/05/31)

Presentation

表紙

[Date]2007/5/31
[Paper #]

Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory

Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii, Kenji Shiraishi,

[Date]2007/5/31
[Paper #]SDM2007-31

Electron Trap Characteristics of Si_3N_4/Si-rich Nitride (SRN)/Si_3N_4 stacked films

Toshiyuki Mine, Takeshi Ishida, Hirotaka Hamamura, Kazuyoshi Torii,

[Date]2007/5/31
[Paper #]SDM2007-32

窒化膜中のキャリア移動度測定手法とMONOSメモリのデータ保持特性への応用(ゲート絶縁膜、容量膜、機能膜及びメモリ技術)

Kozo KATAYAMA, Kiyoshi ISHIKAWA,

[Date]2007/5/31
[Paper #]SDM2007-33

Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD

Masashi MIURA, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI, Seiichi MIYAZAKI, Masayuki KOHNO, Tatsuo NISHIDA, Toshio NAKANISHI,

[Date]2007/5/31
[Paper #]SDM2007-34

Proposal of the mechanism of multi-electron injection into floating gates embedded in SiO_2

Yukihiro TAKADA, Masakazu MURAGUCHI, Kenji SHIRAISHI,

[Date]2007/5/31
[Paper #]SDM2007-35

Statistical Evaluation of Localized Low Gate Current through Tnnel Dielectric using Integrated Array TEG

Yuki KUMAGAI, Akinobu TERAMOTO, Shigetoshi SUGAWA, Tomoyuki SUWA, Tadahiro OHMI,

[Date]2007/5/31
[Paper #]SDM2007-36

Workfunction Tuning of B Doped Fully-Silicided Pd_2Si Gate

Hiroyuki SHIRAISHI, Takuji HOSOI, Akio OHTA, Seiichi MIYAZAKI, Kentaro SHIBAHARA,

[Date]2007/5/31
[Paper #]SDM2007-37

Effects of High-Pressure-H_2O Vapor Annealing on SiO_2/4H-SiC Interface Properties and MOSFET Performance

Hiroshi YANO, Daisuke TAKEDA, Tomoaki HATAKEYAMA, Yukiharu URAOKA, Takashi FUYUKI,

[Date]2007/5/31
[Paper #]SDM2007-38

Study on subnitride and valence band offset at Si_3N_4/Si interface formed using nitrogen radicals

Akinobu TERAMOTO, Takashi ARATANI, Masaaki HIGUCHI, Eiji IKENAGA, Hiroshi NOHIRA, Shigetoshi SUGAWA, Tadahiro OHMI, Takeo HATTORI,

[Date]2007/5/31
[Paper #]SDM2007-39

Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs

Masayuki Terai, Shinji Fujieda,

[Date]2007/5/31
[Paper #]SDM2007-40

Modeling of NBTI Degradation for SiON pMOSFET

Junji SHIMOKAWA, Toshiyuki ENDA, Nobutoshi AOKI, Hiroyoshi TANIMOTO, Sanae ITO, Yoshiaki TOYOSHIMA,

[Date]2007/5/31
[Paper #]SDM2007-41

The Effect of Nitrogen Incorporation on Threshold Voltage Shift of HfSiOx

Chihiro TAMURA, Tatsuya NAITO, Motoyuki SATO, Seiji INUMIYA, Ryu HASUNUMA, Kikuo YAMABE,

[Date]2007/5/31
[Paper #]SDM2007-42

Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi_2

A. Takashima, Y. Nishikawa, S. Schimizu, M. Suzuki, D. Matsushita, M. Yoshiki, M. Tomita, T. Yamaguchi, M. Koyama, N. Fukushima,

[Date]2007/5/31
[Paper #]SDM2007-43

Effects of Nitrogen Incorporation into La_2O_3 Thin Film Using Nitrogen Radicals : Suppression of Increase in EOT by in situ Nitridation

Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Ahmet Parhat, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hirhoshi Iwai,

[Date]2007/5/31
[Paper #]SDM2007-44

Annealing atmosphere dependence of effective work function of metal gates on LaAlO_3 gate dielectrics

Masamichi SUZUKI, Yoshinori TSUCHIYA, Masato KOYAMA,

[Date]2007/5/31
[Paper #]SDM2007-45

Fabrication of LaAlO_3 film by Sputtering method and Evaluation of Electrical Properties

Yutaka Nishioka, Shin Kikuchi, Isao Kimura, Takehito Jimbo, Koukou Suu,

[Date]2007/5/31
[Paper #]SDM2007-46

Significant Improvement of Electronic Characteristics of High-k / Ge MIS Capacitors by Controlling Interface Reactions

Koji KITA, Hideyuki Nomura, Sho Suzuki, Toshitake Takahashi, Tomonori Nishimura, Akira Toriumi,

[Date]2007/5/31
[Paper #]SDM2007-47

Evaluation of Thermal Stability of HfO_2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy

Akio OHTA, Hiroshi NAKAGAWA, Hideki MURAKAMI, Seiichiro HIGASHI, Seiichi MIYAZAKI,

[Date]2007/5/31
[Paper #]SDM2007-48