| Presentation | 2007-06-07 Workfunction Tuning of B Doped Fully-Silicided Pd_2Si Gate Hiroyuki SHIRAISHI, Takuji HOSOI, Akio OHTA, Seiichi MIYAZAKI, Kentaro SHIBAHARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Pd_2Si is one of the FUSI (Fully Silicided) gate materials which are expected as a metal gate material. We have already reported workfunction tuning to positive direction by predoping of P, As or Sb to poly-Si. Predoping of B by implantation of BF^+_2 or B^+ resulted in workfunction shift to negative and positive directions, respectively. In addition to previous investigation on silicidation process, silicide composition and chemical bonding in the vicinity of the silicide/insulator interface were evaluated. Based on these knowledges, workfunction shift mechanism was discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | metal gate / fully silicided gate / FUSI / work function / Pd_2Si |
| Paper # | SDM2007-37 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2007/5/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Workfunction Tuning of B Doped Fully-Silicided Pd_2Si Gate |
| Sub Title (in English) | |
| Keyword(1) | metal gate |
| Keyword(2) | fully silicided gate |
| Keyword(3) | FUSI |
| Keyword(4) | work function |
| Keyword(5) | Pd_2Si |
| 1st Author's Name | Hiroyuki SHIRAISHI |
| 1st Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University:Graduate School of Advanced Sciences of Matter, Hiroshima University() |
| 2nd Author's Name | Takuji HOSOI |
| 2nd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| 3rd Author's Name | Akio OHTA |
| 3rd Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 4th Author's Name | Seiichi MIYAZAKI |
| 4th Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 5th Author's Name | Kentaro SHIBAHARA |
| 5th Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University:Graduate School of Advanced Sciences of Matter, Hiroshima University |
| Date | 2007-06-07 |
| Paper # | SDM2007-37 |
| Volume (vol) | vol.107 |
| Number (no) | 85 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |