| Presentation | 2007-06-08 Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs Masayuki Terai, Shinji Fujieda, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The effects of plasma nitridation and fluorine incorporation on the components of negative-bias temperature instability (NBTI) in p-type MOSFETs with plasma-nitrided SiON gates were investigated. To clarify these effects, NBTI-induced threshold-coltage shift was separated into two components: one for generation of traps at the SiON/Si-substrate interface and one for positive charges within the SiON bulk. It was found that the proportions of the interface and bulk components can be controlled with plasma-nitridation method: the bulk component was increased by RF-plasma nitridation, while the interface component was dominant in the case of ECR-plasma nitridation. Lowering the nitrogen concentration near the SiON/Si-substrate interface decreased the interface component. Lowering the nitrogen concentration near the poly-Si/SiON interface did not decrease NBTI, while it decreased positive oxide charges in the as-fabricated MOSFETs. Furthermore, it was demonstrated that the fluorine incorporation decreases the interface component in plasma-nitrided SiON gates, while it does not decrease the bulk component. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CMOS / REMOTE PLASMA NITRIDATION / RPN / OXINITRIDE / SION / NBTI |
| Paper # | SDM2007-40 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2007/5/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | CMOS |
| Keyword(2) | REMOTE PLASMA NITRIDATION |
| Keyword(3) | RPN |
| Keyword(4) | OXINITRIDE |
| Keyword(5) | SION |
| Keyword(6) | NBTI |
| 1st Author's Name | Masayuki Terai |
| 1st Author's Affiliation | Device Platforms Res. Lab., NEC Corporation() |
| 2nd Author's Name | Shinji Fujieda |
| 2nd Author's Affiliation | Device Platforms Res. Lab., NEC Corporation |
| Date | 2007-06-08 |
| Paper # | SDM2007-40 |
| Volume (vol) | vol.107 |
| Number (no) | 85 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |