| Presentation | 2007-06-08 Study on subnitride and valence band offset at Si_3N_4/Si interface formed using nitrogen radicals Akinobu TERAMOTO, Takashi ARATANI, Masaaki HIGUCHI, Eiji IKENAGA, Hiroshi NOHIRA, Shigetoshi SUGAWA, Tadahiro OHMI, Takeo HATTORI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An area density of subnitride and a valence band offset in Si_3N_4 films formed on Si(100), (111), (110) surface by microwave excited Xe/NH_3 plasma are evaluated using Si 2p spectra emitted by soft X-ray (wave length=1050 eV) and the spectra of the valence band for escape angle of 15° and 80° emitted by soft X-ray (wave length=951 eV), respectively. The density of subnitride decreases with an increase in the surface area density of Si atoms. The energy offsets of balance band for Si_3N_4 formed by the radical nitridation are the same for every Si surface orientation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon nitride film / subnitride / interface / XPS |
| Paper # | SDM2007-39 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2007/5/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on subnitride and valence band offset at Si_3N_4/Si interface formed using nitrogen radicals |
| Sub Title (in English) | |
| Keyword(1) | silicon nitride film |
| Keyword(2) | subnitride |
| Keyword(3) | interface |
| Keyword(4) | XPS |
| 1st Author's Name | Akinobu TERAMOTO |
| 1st Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University() |
| 2nd Author's Name | Takashi ARATANI |
| 2nd Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 3rd Author's Name | Masaaki HIGUCHI |
| 3rd Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 4th Author's Name | Eiji IKENAGA |
| 4th Author's Affiliation | Japan Synchrotron Radiation Research Institute |
| 5th Author's Name | Hiroshi NOHIRA |
| 5th Author's Affiliation | Musashi Institute of Technology |
| 6th Author's Name | Shigetoshi SUGAWA |
| 6th Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 7th Author's Name | Tadahiro OHMI |
| 7th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| 8th Author's Name | Takeo HATTORI |
| 8th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| Date | 2007-06-08 |
| Paper # | SDM2007-39 |
| Volume (vol) | vol.107 |
| Number (no) | 85 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |