Electronics-Electron Devices(Date:2005/10/06)

Presentation
Surface acoustic wave device characteristics fabricated on n^+GaN/undoped GaN structures

Naoteru SHIGEKAWA,  Kazumi NISHIMURA,  Haruki YOKOYAMA,  Kohji HOHKAWA,  

[Date]2005/10/6
[Paper #]ED2005-136,CPM2005-123,LQE005-63
Fabrication of AlGaN/GaN nano wire network using selective RF-MBE

Takeshi OIKAWA,  Taketomo SATO,  Hideki HASEGAWA,  Tamotsu HASHIZUME,  

[Date]2005/10/6
[Paper #]ED2005-137,CPM2005-124,LQE005-64
Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations

Masataka HIGASHIWAKI,  Norio ONOJIMA,  Toshiaki MATSUI,  

[Date]2005/10/6
[Paper #]ED2005-138,CPM2005-125,LQE005-65
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[Date]2005/10/6
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