| Presentation | 2005/10/6 Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations Masataka HIGASHIWAKI, Norio ONOJIMA, Toshiaki MATSUI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have succeeded in suppressing short-channel effects by using high-Al-composition and extremely thin AlGaN barrier layers to improve high-frequency characteristics of sub-0.1-μm AlGaN/GaN heterostructure field-effect transistors (HFETs). The devices had maximum drain current densities of 1.1-1.2A/mm and peak extrinsic transconductances of 305-441mS/mm. The current-gain cutoff frequency (f_T) of 163GHz and maximum oscillation frequency (f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / heterostructure field-effect transistor (HFET) / current-gain cutoff frequency (f_T) / maximum oscillation frequency (f_ |
| Paper # | ED2005-138,CPM2005-125,LQE005-65 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/10/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | heterostructure field-effect transistor (HFET) |
| Keyword(3) | current-gain cutoff frequency (f_T) |
| Keyword(4) | maximum oscillation frequency (f_ |
| 1st Author's Name | Masataka HIGASHIWAKI |
| 1st Author's Affiliation | Millimeter-wave Devices Group, National Institute of Information and Communications Technology (NICT)() |
| 2nd Author's Name | Norio ONOJIMA |
| 2nd Author's Affiliation | Millimeter-wave Devices Group, National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Toshiaki MATSUI |
| 3rd Author's Affiliation | Millimeter-wave Devices Group, National Institute of Information and Communications Technology (NICT) |
| Date | 2005/10/6 |
| Paper # | ED2005-138,CPM2005-125,LQE005-65 |
| Volume (vol) | vol.105 |
| Number (no) | 325 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |