| Presentation | 2005/10/6 Surface acoustic wave device characteristics fabricated on n^+GaN/undoped GaN structures Naoteru SHIGEKAWA, Kazumi NISHIMURA, Haruki YOKOYAMA, Kohji HOHKAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We removed the top n^+GaN layers of n^+GaN/undoped GaN structures grown on (0001) sapphire substrates by Cl_2-based inductively-coupled plasma etching, and fabricated surface acoustic wave (SAW) filters on the exposed surfaces of the undoped GaN layers. We found that their characteristics are similar to those of filters on as-grown undoped GaN layers. This result indicates that GaN-based SAW devices and electron devices such as FET can be fabricated on the same wafers. Characteristics of SAW filters that employ n^+GaN layers as electrodes, and results of sensing hydrogen using SAW-based delay-line oscillators, which were composed as a prototype of functional devices, are also discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Surface acoustic wave / SAW / ICP etching / Hydrogen sensor |
| Paper # | ED2005-136,CPM2005-123,LQE005-63 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/10/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface acoustic wave device characteristics fabricated on n^+GaN/undoped GaN structures |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Surface acoustic wave |
| Keyword(3) | SAW |
| Keyword(4) | ICP etching |
| Keyword(5) | Hydrogen sensor |
| 1st Author's Name | Naoteru SHIGEKAWA |
| 1st Author's Affiliation | Photonics Laboratories, Nippon Telegraph and Telephone Corporation() |
| 2nd Author's Name | Kazumi NISHIMURA |
| 2nd Author's Affiliation | Photonics Laboratories, Nippon Telegraph and Telephone Corporation |
| 3rd Author's Name | Haruki YOKOYAMA |
| 3rd Author's Affiliation | Photonics Laboratories, Nippon Telegraph and Telephone Corporation |
| 4th Author's Name | Kohji HOHKAWA |
| 4th Author's Affiliation | Department of Engineering, Kanagawa Institute of Technology |
| Date | 2005/10/6 |
| Paper # | ED2005-136,CPM2005-123,LQE005-63 |
| Volume (vol) | vol.105 |
| Number (no) | 325 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |