| Presentation | 2005/10/6 Fabrication of AlGaN/GaN nano wire network using selective RF-MBE Takeshi OIKAWA, Taketomo SATO, Hideki HASEGAWA, Tamotsu HASHIZUME, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For fabrication of AlGaN/GaN quantum wire network structures, we studied feasibility of selective MBE growth of AlGaN/GaN wire structures on pre-patterned GaN(0001) substrates. A mesa stripe type pattern and a hexagonal network type pattern were prepared by ECR-RIBE dry etching. As for the mesa direction, <1-100>-direction and <11-20>-direction were compared, and <11-20>-oriented mesa was found to be suitable for the selective growth of wire structures due to larger growth selectivity of GaN/AlGaN layers. Fabricated wire network structure showed strong CL emission, originating form wire structure. For the realization of precise size control of quantum wire structure, time evolution of cross-sectional features and Al composition dependence of the growth selectivity were investigated in detail. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN quantum structure / selective MBE growth / patterned substrate / ECR-RIBE dry-etching |
| Paper # | ED2005-137,CPM2005-124,LQE005-64 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/10/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of AlGaN/GaN nano wire network using selective RF-MBE |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN quantum structure |
| Keyword(2) | selective MBE growth |
| Keyword(3) | patterned substrate |
| Keyword(4) | ECR-RIBE dry-etching |
| 1st Author's Name | Takeshi OIKAWA |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Taketomo SATO |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Hideki HASEGAWA |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2005/10/6 |
| Paper # | ED2005-137,CPM2005-124,LQE005-64 |
| Volume (vol) | vol.105 |
| Number (no) | 325 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |