PROGRAM

Program(download)

Keynote

STT-MRAM and MTJ/CMOS hybrid NV-application processor for IoT and AI era
Tetsuo Endoh (Tohoku Univ.)
Towards topological quantum bits
Koji Ishibashi (RIKEN)
Si highly resistive substrate (HRS) based RF process and devices for mobile front end applications
Yoon Jong Lee (DB Hitek)

Invite

A numerical investigation of delta-doped β-(AlxGa1-x)2O3/β-Ga2O3 double channel heterostructure MODFETs
Gokhan Atmaca (Hongik University)
Phase formation of ferroelectric HfO2 films
Hiroshi Funakubo (Tokyo Institute of Technology)
Charge-balanced GaN super-heterojunction Schottky barrier diode: Design and experimental demonstration
Sangwoo Han (Penn State Univ.)
Compact model for reconfigurable field-effect transistors
Sungyeop Jung (Advanced Institute of Convergence Technology)
GaN-based light-emitting diode with hole distribution layer for high efficiency and color tunability
Garam Kim (Myongji Univ.)
Monolithic 3D for high frequency mixed signal IC
Sanghyeon Kim (KAIST)
Low power artificial neuron circuits using steep switching devices
Min-woo Kwon (Gangneung-Wonju National Univ.)
GaN HEMT technology for low-loss and high-voltage applications
Masaaki Kuzuhara (Kwansei Gakuin Univ.)
Investigation of HfSiOx gate insulator formed by changing fabrication process conditions for GaN power device
Toshihide Nabatame (NIMS)
Reaction mechanism of area-selective atomic layer deposition for advanced device fabrication
Il-kwon Oh (Ajou Univ.)
Information processing nanodevices learning from natural system
Takahide Oya (Yokohama National Univ.)
The role of photon to electron converted organic materials for image sensor
Kyung-Bae Park (Samsung Advanced Institute of Technology)
Application of electromigrated Au nanogaps to artificial synaptic devices and physical reservoir computing
Keita Sakai (Tokyo Univ. of Agriculture and Technology)
Ultra-thin and lightweight organic amplifier enabling bio-signal monitoring with reduced noise levels
Tsuyoshi Sekitani (Osaka Univ.)
Polymer packaging for high frequency and implantable devices
Seonho Seok (CNRS-University Paris Saclay)
Quantum chemical understanding of atomic layer deposition process
Bonggeun Shong (Hongik University)
Phase change materials enabling low-energy PCRAM
Yuji Sutou (Tohoku Univ.)
SiC MOSFET - key device for future electrification
Tomohide Terashima (Mitsubishi Electric Corp.)
Present status and prospect of graphene interconnect application
Kazuyoshi Ueno (Shibaura Institute of Technology)
Approaches of highly reliable package for high power electronic devices
Sang Won Yoon (Hanyang Univ.)