Electronics-Silicon Devices and Materials(Date:2010/12/10)

Presentation
表紙

,  

[Date]2010/12/10
[Paper #]
目次

,  

[Date]2010/12/10
[Paper #]
Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoretical Calculations

Hironori Yoshioka,  Naoya Morioka,  Jun Suda,  Tsunenobu Kimoto,  

[Date]2010/12/10
[Paper #]SDM2010-185
X-ray Detectors (Silicon Drift Detectors) using High-Resistivity Si : Simulation Results

Seigo KITANOYA,  Seiji NISHIKAWA,  Hideharu MATSUURA,  

[Date]2010/12/10
[Paper #]SDM2010-186
Ion channeling at Heusler alloy Fe_<3-x>Mn_xSi(111)/Ge(111) heteroepitaxial interfaces

Takahito NAKAJIMA,  Bui MATSUKURA,  Kazumasa NARUMI,  Yoshihito MAEDA,  

[Date]2010/12/10
[Paper #]SDM2010-187
Improvement of Luminescence Property of ZnS Inorganic EL by Atomization Treatment of Phosphor

Shogo Horiguchi,  Takuya Kontani,  Masahiro Horita,  Nobuyoshi Taguchi,  Yukiharu Uraoka,  

[Date]2010/12/10
[Paper #]SDM2010-188
Laser Doping at Room Temperature in Multi-crystalline Silicon Solar Cell Process

Mitsuhiro Hasegawa,  Kenji Hirata,  Tamaki Takayama,  Tomohiro Funatani,  Takashi Fuyuki,  

[Date]2010/12/10
[Paper #]SDM2010-189
Optimization of Laser Doping by Controlled Dopant Precursor Layer in Silicon Solar Cells Process

Tomohiro FUNATANI,  Kenji HIRATA,  Tamaki TAKAYAMA,  Mitsuhiro HASEGAWA,  Takashi FUYUKI,  

[Date]2010/12/10
[Paper #]SDM2010-190
Effect of H_2-N_2 Plasma Exposure on Nanostructured Silicon

Akitsugu WATANABE,  Kenichi SUDA,  Hideki NAKADA,  Mitsuya MOTOHASHI,  

[Date]2010/12/10
[Paper #]SDM2010-191
Estimation of Physical Properties and Control of Memory Performance in ReRAM

K. Kinoshita,  T. Yoda,  H. Tanaka,  A. Hanada,  S. Kishida,  

[Date]2010/12/10
[Paper #]SDM2010-192
Effects of thermal treatment in vacuum on the electrical characteristics of Pt/NiO/Pt stack structures for ReRAM

Tatsuya IWATA,  Yusuke NISHI,  Tsunenobu KIMOTO,  

[Date]2010/12/10
[Paper #]SDM2010-193
Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Seiji NISHIKAWA,  Seigo KITANOYA,  Hideharu MATSUURA,  

[Date]2010/12/10
[Paper #]SDM2010-194
Changes of Majority-Carrier Concentration in 4H-SiC Epilayers by 200keV Electron Irradiation

Takunori NOJIRI,  Kozou NISHINO,  Hideki YANAGISAWA,  Hideharu MATSUURA,  Shinobu ONODA,  Takeshi OHSHIMA,  

[Date]2010/12/10
[Paper #]SDM2010-195
Properties of the oxidized layers on SiC in supercritical water

Tomohisa Satoh,  Takashi Futatsuki,  Taro Oe,  Naoyoshi Komatsu,  Yoshinari Kamakura,  Chiharu Kimura,  Hidemitsu Aoki,  

[Date]2010/12/10
[Paper #]SDM2010-196
Irradiation Effects on Silicon Surface by Polyatomic Ion Beams

Mitsuaki TAKEUCHI,  Hiromichi RYUTO,  Gikan H. TAKAOKA,  

[Date]2010/12/10
[Paper #]SDM2010-197
Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction

Masashi Okutani,  Shuhei Takashima,  Masahiro Yoshimoto,  Woo Sik Yoo,  

[Date]2010/12/10
[Paper #]SDM2010-198
Lateral Large-Grained Low-Temperature Poly-Si_<1-x>Ge_x TFTs on Glass Substrate

Yasunori Okabe,  Kenji Kondo,  Kenta Hirose,  Junki Suzuki,  Kuninori Kitahara,  Akito Hara,  

[Date]2010/12/10
[Paper #]SDM2010-199
Evaluation of two layers simultaneous crystallized LTPS-TFT memory by the laser irradiation from the back.

Masahiro MATSUE,  Kazunori ICHIKAWA,  Hiroshi AKAMATSU,  Koji YAMASAKI,  Masahiro HORITA,  Yukiharu URAOKA,  

[Date]2010/12/10
[Paper #]SDM2010-200
Study for DNA-Field Effect Transistor with Si gate

Shogo TAKAGI,  Naoto MATSUO,  Kazushige YAMANA,  Akira HEYA,  Tadao TAKADA,  Kenji SAKAMOTO,  Shin YOKOYAMA,  

[Date]2010/12/10
[Paper #]SDM2010-201
Neural Network at Device Level using Poly-Si TFT : Learning of multiple times and learning of AND, OR, EXOR

T. Miyatani,  Y. Fujita,  D. Mishima,  J. Taniguchi,  T. Kasakawa,  M. Kimura,  

[Date]2010/12/10
[Paper #]SDM2010-202
12>> 1-20hit(25hit)