| Presentation | 2010-12-17 Properties of the oxidized layers on SiC in supercritical water Tomohisa Satoh, Takashi Futatsuki, Taro Oe, Naoyoshi Komatsu, Yoshinari Kamakura, Chiharu Kimura, Hidemitsu Aoki, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The field effect transistors (FETs) fabricated on silicon carbide (SiC) substrates are one of the promising candidates for the next generation power devices. In order to improve the performance of FETs, the formation of gate insulator film on SiC is a critical issue, and high-temperature and long-time oxidation have been required so far to obtain high-quality gate oxides. In this study, we report on a SiC oxidation process in supercritical water (SCW), which enables rapid SiC oxidation even at low temperature. It is shown that 50 nm oxide film can be formed on SiC surface by one hour SCW oxidation under the condition of 400℃, 25 MPa. In addition, compared to the conventional thermal oxidation at 1100℃, it is revealed that (i) the microroughness at the gate oxide/SiC interface is significantly reduced by the SCW process, and (ii) the oxide layer is predominantly formed by not the SiO_2 but the SiO_2-C_2 bonds, by using AFM and XPS measurements, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / FET / oxide / supercritical water / XPS / AFM |
| Paper # | SDM2010-196 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2010/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of the oxidized layers on SiC in supercritical water |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | FET |
| Keyword(3) | oxide |
| Keyword(4) | supercritical water |
| Keyword(5) | XPS |
| Keyword(6) | AFM |
| 1st Author's Name | Tomohisa Satoh |
| 1st Author's Affiliation | Graduate School of Engineering, Osaka University() |
| 2nd Author's Name | Takashi Futatsuki |
| 2nd Author's Affiliation | Organo Corporation |
| 3rd Author's Name | Taro Oe |
| 3rd Author's Affiliation | Organo Corporation |
| 4th Author's Name | Naoyoshi Komatsu |
| 4th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 5th Author's Name | Yoshinari Kamakura |
| 5th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 6th Author's Name | Chiharu Kimura |
| 6th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 7th Author's Name | Hidemitsu Aoki |
| 7th Author's Affiliation | Graduate School of Engineering, Osaka University |
| Date | 2010-12-17 |
| Paper # | SDM2010-196 |
| Volume (vol) | vol.110 |
| Number (no) | 351 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |