Presentation 2010-12-17
Estimation of Physical Properties and Control of Memory Performance in ReRAM
K. Kinoshita, T. Yoda, H. Tanaka, A. Hanada, S. Kishida,
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Abstract(in English) We found that ReRAM filament could be formed by the introduction of vacancies into a NiO film utilizing reactive ion etching (RIE). This procedure provides forming-free ReRAM. In this paper, the initial resistance dependence of the reset current and the distribution of the forming and set voltages were investigated for the forming-free ReRAM cells, which start with the reset process. As a result, it was clarified that the reset current is proportional to the reciprocal of initial resistance independently of the film thickness and the film formation temperature. In addition, it was suggested that there are two kinds of filaments in the forming-free ReRAM. One is the filament which is completely restored by the first reset process. The other continues to operate even after the first reset.
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Paper # SDM2010-192
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Committee SDM
Conference Date 2010/12/10(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Estimation of Physical Properties and Control of Memory Performance in ReRAM
Sub Title (in English)
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1st Author's Name K. Kinoshita
1st Author's Affiliation Tottori University:Tottori University Electronic Display Reserch Cernter()
2nd Author's Name T. Yoda
2nd Author's Affiliation Tottori University
3rd Author's Name H. Tanaka
3rd Author's Affiliation Tottori University
4th Author's Name A. Hanada
4th Author's Affiliation Tottori University
5th Author's Name S. Kishida
5th Author's Affiliation Tottori University:Tottori University Electronic Display Reserch Cernter
Date 2010-12-17
Paper # SDM2010-192
Volume (vol) vol.110
Number (no) 351
Page pp.pp.-
#Pages 6
Date of Issue