Presentation | 2010-12-17 Estimation of Physical Properties and Control of Memory Performance in ReRAM K. Kinoshita, T. Yoda, H. Tanaka, A. Hanada, S. Kishida, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We found that ReRAM filament could be formed by the introduction of vacancies into a NiO film utilizing reactive ion etching (RIE). This procedure provides forming-free ReRAM. In this paper, the initial resistance dependence of the reset current and the distribution of the forming and set voltages were investigated for the forming-free ReRAM cells, which start with the reset process. As a result, it was clarified that the reset current is proportional to the reciprocal of initial resistance independently of the film thickness and the film formation temperature. In addition, it was suggested that there are two kinds of filaments in the forming-free ReRAM. One is the filament which is completely restored by the first reset process. The other continues to operate even after the first reset. |
Keyword(in Japanese) | (See Japanese page) |
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Paper # | SDM2010-192 |
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Committee | SDM |
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Conference Date | 2010/12/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Estimation of Physical Properties and Control of Memory Performance in ReRAM |
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1st Author's Name | K. Kinoshita |
1st Author's Affiliation | Tottori University:Tottori University Electronic Display Reserch Cernter() |
2nd Author's Name | T. Yoda |
2nd Author's Affiliation | Tottori University |
3rd Author's Name | H. Tanaka |
3rd Author's Affiliation | Tottori University |
4th Author's Name | A. Hanada |
4th Author's Affiliation | Tottori University |
5th Author's Name | S. Kishida |
5th Author's Affiliation | Tottori University:Tottori University Electronic Display Reserch Cernter |
Date | 2010-12-17 |
Paper # | SDM2010-192 |
Volume (vol) | vol.110 |
Number (no) | 351 |
Page | pp.pp.- |
#Pages | 6 |
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