Electronics-Silicon Devices and Materials(Date:1997/05/23)

Presentation
表紙

,  

[Date]1997/5/23
[Paper #]
目次

,  

[Date]1997/5/23
[Paper #]
Preparation of SiN thin films by remote plasma CVD method using TDMAS

Takuya Ogishima,  Toru Aoki,  Yoichiro Nakanishi,  Yoshinori Hatanaka,  A. M. Wrobe,  

[Date]1997/5/23
[Paper #]SDM97-13
Epitaxial Growth of InN by Microwave-excited Remorte Plasma

Kouji Shimada,  Tohru Tsuchiya,  Masato Oonishi,  Hisao Saiki,  Osamu Miki,  Akira Yoshida,  

[Date]1997/5/23
[Paper #]SDM97-14
Formation and Structural Control of Diamond Film by Pulsed Discharge Plasma CVD

Mikio NODA,  

[Date]1997/5/23
[Paper #]SDM97-15
Nitrogen radical doping for ZnTe growth by MOCVD

Daiji Noda,  Toru Aoki,  Yoichiro Nakanishi,  Yoshinori Hatanaka,  

[Date]1997/5/23
[Paper #]SDM97-16
X-ray photoelectron spectroscopy study at the initial stage of oxynitridation process

Sumiyasu Iguchi,  Yoji Saito,  

[Date]1997/5/23
[Paper #]SDM97-17
Remote-plasma-excited nitridation process of surface and interface in silicon-oxide system

Yoji Saito,  Manabu Kodera,  

[Date]1997/5/23
[Paper #]SDM97-18
[OTHERS]

,  

[Date]1997/5/23
[Paper #]