Presentation 1997/5/23
Formation and Structural Control of Diamond Film by Pulsed Discharge Plasma CVD
Mikio NODA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) When the diamond films were prepared by DC plasma CVD, their crystalline quality (CQ) could be controlled by means of pulsation of the discharge. The CQ could be superior by increasing the pulse repetition period and decreasing the duty ratio. Formation of the current peak at the beginning of the discharge (BD) and increase of the non-discharge time (Tn) after the discharge were also effective for improving CQ. These results suggest that the improvement of CQ is results in both the formation of electrons of very high temperature at BD and the etching of non-diamond components during Tn.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) plasma CVD / diamond film / pulsed discharge / crystalline quality repetition period / duty ratio
Paper # SDM97-15
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Conference Information
Committee SDM
Conference Date 1997/5/23(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation and Structural Control of Diamond Film by Pulsed Discharge Plasma CVD
Sub Title (in English)
Keyword(1) plasma CVD
Keyword(2) diamond film
Keyword(3) pulsed discharge
Keyword(4) crystalline quality repetition period
Keyword(5) duty ratio
1st Author's Name Mikio NODA
1st Author's Affiliation Integrated Natural Sciences, Aichi University of Education()
Date 1997/5/23
Paper # SDM97-15
Volume (vol) vol.97
Number (no) 68
Page pp.pp.-
#Pages 7
Date of Issue