Presentation 1997/5/23
Remote-plasma-excited nitridation process of surface and interface in silicon-oxide system
Yoji Saito, Manabu Kodera,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) First, silicon substrates were directly oxynitrided by remote-plasma-excited nitrogen and oxygen. Second, we tried the oxynitridation of silicon dioxide films by the excited nitrogen and oxygen. Nitrogen is incorporated near the SiO_2-Si interface only if the substrate temperature is higher than 750℃. Moreover, nitrogen hardly remains near the surface of the dioxide films by the above procedures. We propose a novel technique, in which the dioxide films are fluorinated and subsequently nitrided by the excited nitrogen. The only surfaces of the dioxide films are nitrided and the nitrogen concentration of 2-3% is obtained by this process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) silicon oxynitride / remote plasma / Auger electron spectroscopy / surface nitridation
Paper # SDM97-18
Date of Issue

Conference Information
Committee SDM
Conference Date 1997/5/23(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Remote-plasma-excited nitridation process of surface and interface in silicon-oxide system
Sub Title (in English)
Keyword(1) silicon oxynitride
Keyword(2) remote plasma
Keyword(3) Auger electron spectroscopy
Keyword(4) surface nitridation
1st Author's Name Yoji Saito
1st Author's Affiliation Seikei University()
2nd Author's Name Manabu Kodera
2nd Author's Affiliation Seikei University
Date 1997/5/23
Paper # SDM97-18
Volume (vol) vol.97
Number (no) 68
Page pp.pp.-
#Pages 5
Date of Issue