Electronics-Silicon Devices and Materials(Date:1995/12/08)

Presentation
表紙

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[Date]1995/12/8
[Paper #]
目次

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[Date]1995/12/8
[Paper #]
Influence of SiGe Structure Parameters on the Suppression of the Floating-body Effects for Fully Depleted SOI MOSFETs

A. Nishiyama,  O. Arisumi,  M. Terauchi,  K. Matsuzawa,  N. Shigyo,  M. Yoshimi,  S. Takeno,  K. Suzuki,  

[Date]1995/12/8
[Paper #]SDM95-184
The electrical properties and structure of poly-Si films in high temperature annealing by gas flames

W-F. Qu,  T. Komori,  K. Takamoto,  Y. Masaki,  A. Kitagawa,  M. Suzuki,  

[Date]1995/12/8
[Paper #]SDM95-185
Characterization of B-doped Si Nanocrystals by Raman and Infrared Absorption Spectroscopy

Y. Kanzawa,  M. Fujii,  S. Hayashi,  K. Yamamoto,  

[Date]1995/12/8
[Paper #]SDM95-186
Photoluminescence with narrow spectral width from porous silicon

K. Furuta,  M. Okamoto,  T. Ohiwa,  A. Hatta,  T. Ito,  A. Hiraki,  

[Date]1995/12/8
[Paper #]SDM95-187
Heavy Doping and Junction formation of Low-Temperature Epitaxial Si Films Grown by Photo-CVD

Masakazu Kanai,  Katsuya Abe,  Takayuki Oshima,  Akira Yamada,  Makoto Konagai,  

[Date]1995/12/8
[Paper #]SDM95-188
Heteroepitaxial contact system of Al(001)/YSi2-x/Si(001)

Mayumi Takeyama,  Atsushi Noya,  Tomoyuki Fukuda,  Katsutaka Sasaki,  

[Date]1995/12/8
[Paper #]SDM95-189
Epitaxial growth of thin γ-Al_2O_3 films by mixed-source MBE using Al solid source and N_2O gas source

Hiroyuki Wado,  Tadami Shimizu,  Kentaro Ohtani,  J. Y. Chul,  Makoto Ishida,  

[Date]1995/12/8
[Paper #]SDM95-190
Evaluation of 3C-SiC/Si using the photo-conductivity decay method

H. Tajiri,  Y. Morita,  Y. Koga,  T. Makino,  M. Ichimura,  A. Usami,  

[Date]1995/12/8
[Paper #]SDM95-191
Evaluation of the recombination property at a metal/silicon interface by the laser/microwave method

Takanori Makino,  Masaya Ichimura,  Akira Usami,  

[Date]1995/12/8
[Paper #]SDM95-192
Detailed Analysis of Metal/4H-SiC Schottky Barrier Height

O. Takemura,  A. Itoh,  T. Kimoto,  H. Matsunami,  

[Date]1995/12/8
[Paper #]SDM95-193
Etching by Reactive Cluster Ion Beams

N. Toyoda,  H. Kitani,  J. Matsuo,  I. Yamada,  

[Date]1995/12/8
[Paper #]SDM95-194
Reduction of diffusion of phosphorus implanted in silicon by simultaneous boron implantation

Katsuya Shiga,  Katstuhiro Yokota,  Yasunori Ando,  Kouji Matsuda,  Masanori Watanabe,  Toshinori Takagi,  Hiromichi Takano,  Masao Kumagai,  

[Date]1995/12/8
[Paper #]SDM95-195
Shallow junction formation by polyatomic cluster ion implantation

D. Takeuchi,  N. Toyoda,  N. Shimada,  J. Matsuo,  I. Yamada,  

[Date]1995/12/8
[Paper #]SDM95-196
Nitrogen in-situ doped Poly Buffer LOCOS : Simple and Scalable Isolation Technology for Deep-Submicron Silicon Devices

T. Kobayashi,  S. Nakayama,  M. Miyake,  Y. Okazaki,  H. Inokawa,  

[Date]1995/12/8
[Paper #]SDM95-197
Inductive Susceptance of Gold Diffused Silicon Diode : Inductive Susceptance Derived from Shockley-Read-Hall Statistics

Toshio TERANO,  Ichiro TANIGUCHI,  

[Date]1995/12/8
[Paper #]SDM95-198
Analyze of a-Si:H film properties by a Laminar Flow Photo-CVD Method

Tetsuya Yamaguchi,  Yoshinori Iida,  Akihiko Furukawa,  Yoshiki Ishizuka,  Hidetoshi Nozaki,  

[Date]1995/12/8
[Paper #]SDM95-199
Preparation and Estimation of poly-Si TFT Empoying Schottky Barrier Contacts at Source and Drain

Yukinobu TANIDA,  Reiji HATTORI,  Junji SHIRAFUJI,  

[Date]1995/12/8
[Paper #]SDM95-200
[OTHERS]

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[Date]1995/12/8
[Paper #]