| Presentation | 1995/12/8 Reduction of diffusion of phosphorus implanted in silicon by simultaneous boron implantation Katsuya Shiga, Katstuhiro Yokota, Yasunori Ando, Kouji Matsuda, Masanori Watanabe, Toshinori Takagi, Hiromichi Takano, Masao Kumagai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Phosphorus and Boron ions were simultaneously implanted into silicon. This implanted silicon was annealed in Ar gas at 950℃ for 30 and 300 min. phosphorus coupled with boron at the beginning of this annealing. This complex was electrically inactive and had a small diffusivity The activity of phosphorus diminuted and diffusivity reduced. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon / Implantation / Impurity / Diffusion / Electrical property |
| Paper # | SDM95-195 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/12/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of diffusion of phosphorus implanted in silicon by simultaneous boron implantation |
| Sub Title (in English) | |
| Keyword(1) | Silicon |
| Keyword(2) | Implantation |
| Keyword(3) | Impurity |
| Keyword(4) | Diffusion |
| Keyword(5) | Electrical property |
| 1st Author's Name | Katsuya Shiga |
| 1st Author's Affiliation | Faculty of Engineering, Kansai University() |
| 2nd Author's Name | Katstuhiro Yokota |
| 2nd Author's Affiliation | Faculty of Engineering, Kansai University |
| 3rd Author's Name | Yasunori Ando |
| 3rd Author's Affiliation | Nisshin Denki |
| 4th Author's Name | Kouji Matsuda |
| 4th Author's Affiliation | Nisshin Denki |
| 5th Author's Name | Masanori Watanabe |
| 5th Author's Affiliation | Center of Ion Engineering |
| 6th Author's Name | Toshinori Takagi |
| 6th Author's Affiliation | Center of Ion Engineering |
| 7th Author's Name | Hiromichi Takano |
| 7th Author's Affiliation | Kanagawa High-Technology Foundation |
| 8th Author's Name | Masao Kumagai |
| 8th Author's Affiliation | Kanagawa High-Technology Foundation |
| Date | 1995/12/8 |
| Paper # | SDM95-195 |
| Volume (vol) | vol.95 |
| Number (no) | 400 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |