Presentation 1995/12/8
Evaluation of the recombination property at a metal/silicon interface by the laser/microwave method
Takanori Makino, Masaya Ichimura, Akira Usami,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We investigate the recombination property at a metal/silicon interface using a noncontact laser/microwave method. The results show that the effective surface recombination velocity does not change in case of Schottky contacts, whereas it decreases for an n-type silicon which has ohmic contacts on the surface. This is because of the infinite surface recombination velocity at a metal/silicon interface and the insufficient minority carrier blocking by the band bending at the interface.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) band bending / surface recombination velocity / noncontact laser/microwave method / lifetime / Schottky contact / ohmic contact
Paper # SDM95-192
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Committee SDM
Conference Date 1995/12/8(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of the recombination property at a metal/silicon interface by the laser/microwave method
Sub Title (in English)
Keyword(1) band bending
Keyword(2) surface recombination velocity
Keyword(3) noncontact laser/microwave method
Keyword(4) lifetime
Keyword(5) Schottky contact
Keyword(6) ohmic contact
1st Author's Name Takanori Makino
1st Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology()
2nd Author's Name Masaya Ichimura
2nd Author's Affiliation Center for Coperative Research, Nagoya Institute of Technology
3rd Author's Name Akira Usami
3rd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 1995/12/8
Paper # SDM95-192
Volume (vol) vol.95
Number (no) 400
Page pp.pp.-
#Pages 6
Date of Issue