Electronics-Silicon Devices and Materials(Date:1995/08/16)

Presentation
表紙

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[Date]1995/8/16
[Paper #]
目次

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[Date]1995/8/16
[Paper #]
In-situ Doping of P and B Doping Si_<1-x>Ge_x Epitaxial Growth by LPCVD

Hiroaki Fujimoto,  Junichi Murota,  Yushin Takasawa,  Kinya Goto,  Makoto Ishii,  Takashi Matsuura,  Yasuji Sawada,  

[Date]1995/8/16
[Paper #]
Self-Aligned Ultrashallow Junction Formation Using Selective Si_<1-x>Ge_x CVD for Ultra-Small MOSFET

Kinya Goto,  Junichi Murota,  Fumitaka Honma,  Takashi Matsuura,  Yasuji Sawada,  

[Date]1995/8/16
[Paper #]
A Novel Circuit Technology with SGT's for Gigabit DRAM's

Shigeyoshi Watanabe,  Kenji Tsuchida,  Daisaburo Takashima,  Yukihito Oowaki,  Akihiro Nitayama,  Katsuhiko Hieda,  Hiroshi Takato,  Kazumasa Sunouchi,  Fumio Horiguchi,  Kazunori Ohuchi,  Hisashi Hara,  Fujio Masuoka,  

[Date]1995/8/16
[Paper #]
Improvement of PECVD-SiNx for TFT gate insulator by controlling ion bombardment energy

Yasuhiko Kasama,  Tadahiro Ohmi,  Koich Fukuda,  Hirofumi Fukui,  Chisato Iwasaki,  Shoich Ono,  

[Date]1995/8/16
[Paper #]
Step Arrangement Design on Si Surfaces and its Application

Toshio Ogino,  Hiroki Hibino,  Yoshikazu Homma,  

[Date]1995/8/16
[Paper #]
ClF_3 Pretreatment in Selective Al CVD

H. Matsuhashi,  J.H. Chung,  A. Gotoh,  K. Masu,  K. Tsubouchi,  

[Date]1995/8/16
[Paper #]
First principles calculations of Al adsorption on the hydrogen-terminated Si(100) surface

Minoru Ikeda,  Yoshiaki Tanida,  

[Date]1995/8/16
[Paper #]
A study of CD variation factors on chemically amplified resist

Minoru Watanabe,  Isao Satou,  Takasi Taguchi,  Jun Kanamori,  

[Date]1995/8/16
[Paper #]
Coulomb Interation Effect in Cell Projection Lithography

Hiroshi Yamashita,  Katuyuki Itoh,  Kenichi Tokunaga,  Takao Tamura,  Hiroshi Nozue,  

[Date]1995/8/16
[Paper #]
[OTHERS]

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[Date]1995/8/16
[Paper #]