Presentation 1995/8/16
Coulomb Interation Effect in Cell Projection Lithography
Hiroshi Yamashita, Katuyuki Itoh, Kenichi Tokunaga, Takao Tamura, Hiroshi Nozue,
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Abstract(in English) We have experimentally analyzed the resolution in e-beam cell projection lithography. The results indicated that the Coulomb interaction effect and the proximity effect are critical issues for resolution because of the larger beam current compared with the conventional variable-shaped beam. We achieved a practical resolution of 0.18μm, which is enough for 1G DRAM fabrication, by adjusting the beam current.
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Keyword(in English) electrom beam lithography / cell projection / Coulomb interaction effect / resolution / DRAM
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Committee SDM
Conference Date 1995/8/16(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Coulomb Interation Effect in Cell Projection Lithography
Sub Title (in English)
Keyword(1) electrom beam lithography
Keyword(2) cell projection
Keyword(3) Coulomb interaction effect
Keyword(4) resolution
Keyword(5) DRAM
1st Author's Name Hiroshi Yamashita
1st Author's Affiliation ULSI Device Development Laboratories, NEC Corporation()
2nd Author's Name Katuyuki Itoh
2nd Author's Affiliation ULSI Device Development Laboratories, NEC Corporation
3rd Author's Name Kenichi Tokunaga
3rd Author's Affiliation ULSI Device Development Laboratories, NEC Corporation
4th Author's Name Takao Tamura
4th Author's Affiliation ULSI Device Development Laboratories, NEC Corporation
5th Author's Name Hiroshi Nozue
5th Author's Affiliation ULSI Device Development Laboratories, NEC Corporation
Date 1995/8/16
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Volume (vol) vol.95
Number (no) 205
Page pp.pp.-
#Pages 8
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