| Presentation | 1995/8/16 ClF_3 Pretreatment in Selective Al CVD H. Matsuhashi, J.H. Chung, A. Gotoh, K. Masu, K. Tsubouchi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed aluminum chemical vapor deposition (CVD) technology using dimethylaluminum hydride and hydrogen. Aluminum is selectively deposited on conductive material surface such as Si, TiN, TiSi_2, etc. Low resistivity aluminum deposition on TiN barrier metal is required in metallization process of ULSI. Since selective aluminum deposition is based on surface chemical reaction on conductive material, the native oxide of TiN prevents continuous growth of CVD Al thin film. In this work, plasmaless ClF_3 pretreatment of TiN prior to Al deposition is investigated. Surface morphology of CVD Al is found to be dramatically improved with the ClF_3 pretreatment. The reflectivity of the CVD Al is over 90%. Furthermore, CVD Al is deposited into 0.5μmφ contact holes covered with CVD TiN with superior step coverage. XPS measurement has revealed that chlorine does not remain on TiN surface after the ClF_3 pretreatment. The ClF_3 pretreatment is promising for Al CVD on TiN surface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | selective Al CVD / ClF_3 pretreatment / TiN / surface morphology / step coverage / corrosion |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/8/16(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ClF_3 Pretreatment in Selective Al CVD |
| Sub Title (in English) | |
| Keyword(1) | selective Al CVD |
| Keyword(2) | ClF_3 pretreatment |
| Keyword(3) | TiN |
| Keyword(4) | surface morphology |
| Keyword(5) | step coverage |
| Keyword(6) | corrosion |
| 1st Author's Name | H. Matsuhashi |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | J.H. Chung |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | A. Gotoh |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | K. Masu |
| 4th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 5th Author's Name | K. Tsubouchi |
| 5th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| Date | 1995/8/16 |
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| Volume (vol) | vol.95 |
| Number (no) | 205 |
| Page | pp.pp.- |
| #Pages | 5 |
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